The Importance of Temporal and Spatial Temperature Gradients in IC Reliability Analysis
نویسندگان
چکیده
Existing IC reliability models assume a uniform, typically worst-case, operating temperature, but temporal and spatial temperature variations affect expected device lifetime. This paper presents a model that accounts for temperature gradients, dramatically improving interconnect and gate-oxide lifetime prediction accuracy. By modeling expected lifetime as a resource that is consumed over time at a temperature-dependent rate, substantial design margin can be reclaimed and/or less expensive cooling systems may be used. This report is superseded by TR CS-2004-08. Keywords—reliability, electromigration, gate oxide breakdown, thermal management, gradient
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